Paper
16 June 2003 Design and performance of a step and repeat imprinting machine
Ian McMackin, Philip Schumaker, Daniel Babbs, Jin Choi, Wenli Collison, S. V. Sreenivasan, Norman E. Schumaker, Michael P. C. Watts, Ronald D. Voisin
Author Affiliations +
Abstract
Molecular Imprints, Inc. (MII) has developed the ImprioTM 100, which is the first commercial step and repeat imprint lithography system with field-to-field alignment. This system is designed to implement the UV curable nano-replication capability of the Step and FlashTM Imprint Lithography (S-FILTM) process. To-date, the Imprio 100 system has demonstrated: 1) Full 200 mm wafer coverage with lithographically useful patterning; 2) Full wafer residual thickness control to enable practical etching (thickness variation < 50 nm, 3 sigma); 3) Field edge control compatible with 50 um kerf regions. 4) Multi-day CD uniformity measured on an analytical SEM < 2 nm, 3 sigma with no process adjustments; 5) Etch pattern transfer including break-through etch of residual material, followed by a bi-layer etch through thick planarization layers; 6) Initial level-to-level alignment target acquisition with accuracy of better than 100 nm. 7) Low air borne particle counts in tool microenvironment consistent with Class 0.1 while imprinting.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ian McMackin, Philip Schumaker, Daniel Babbs, Jin Choi, Wenli Collison, S. V. Sreenivasan, Norman E. Schumaker, Michael P. C. Watts, and Ronald D. Voisin "Design and performance of a step and repeat imprinting machine", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.490133
Lens.org Logo
CITATIONS
Cited by 13 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Semiconducting wafers

Etching

Ultraviolet radiation

Lithography

Liquids

Optical alignment

Particles

Back to Top