Electron-beam-assisted critical dimension reduction

Jei-Wei Chang; Chao-Peng Chen; Robert Yang

doi:10.1117/12.484681

16 June 2003 Electron-beam-assisted critical dimension reduction

Jei-Wei Chang, Chao-Peng Chen, Robert Yang

Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003) https://doi.org/10.1117/12.484681
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

In this communication, we presented a novel approach to reduce critical dimension of resist features. The proposed method involves two process steps: resist pattern formation and critical dimension reduction. This concept was demonstrated to produce sub-100 nm resist features using negative-tone chemically amplified resist, NEB22A2 and Hitachi-900D electron beam lithography system. Experimental results indicate that the degree of critical dimension reduction can be controlled by the dose of flood electron-beam exposure and second wet developer strength. The theoretical results, based on Monte Carlo simulations, were found to be in qualitatively agreement with our experimental observations.

Citation Download Citation

Jei-Wei Chang, Chao-Peng Chen, and Robert Yang "Electron-beam-assisted critical dimension reduction", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.484681

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