High-resolution x-ray masks for the application of high-aspect-ratio microelectromechanical systems (HARMS)

Lin Wang; Yohannes M. Desta; Jost Goettert; F. Xian

doi:10.1117/12.504555

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16 June 2003 High-resolution x-ray masks for the application of high-aspect-ratio microelectromechanical systems (HARMS)

Lin Wang, Yohannes M. Desta, Jost Goettert, F. Xian

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Proceedings Volume 5037, Emerging Lithographic Technologies VII; (2003) https://doi.org/10.1117/12.504555
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Challenging requirements in optical and BioMEMS application with high aspect ratios of microstructures in access of 20 and smallest structure details of less than 1 μm have motivated this work to irmpove x-ray mask fabrication. Several approaches to pattern an intermediate x-ray mask with the gold absorber thickness of 1.6-2.2μm using a 1μm thick silicon nitride membrane have been explored. E-beam lithography is employed for primary patterning and experimental results show that high energy (100keV) e-beam lithography is a very promising approach. So-called working x-ray mask can be fabricated from intermediate x-ray mask through x-ray lithography. More than 10μm thick PMMA x-ray resist has been coated on the silicon nitride membrane by multi-coating process without crack. First exposure results indicate that adhesion and stability of sub-micrometer structures wiht these heights is critical. In order to overcome these problems a novel approach has been proposed by coating resist on both sides of the silicon nitride membrane and simultaneous patterning of both sides using x-rays. First successful experimental results have been achieved for proving the feasibility.

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Lin Wang, Yohannes M. Desta, Jost Goettert, and F. Xian "High-resolution x-ray masks for the application of high-aspect-ratio microelectromechanical systems (HARMS)", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.504555

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