Paper
16 June 2003 Phase-shift mask in EUV lithography
Author Affiliations +
Abstract
The printing of line patterns using an attenuated phase shift mask (PSM) and an alternating PSM was examined through simulations. The attenuated PSM consisted of a bilayer structure, in which multiple interference provides a large latitude for appropriate thicknesses of the absorber and buffer layers. The attenuated PSM provides greater depth of focus (DOF) for sparse lines. The alternating PSM has better aerial-image contrast not only for dense lines but also for isolated lines. An additive structure is proposed for the alternating PSM, which does not require any etching of the glass substrate. Given an appropriate stack of materials, this structure provides a phase shift of 180 degrees and the same reflectance simultaneously. In this study, the printability of 18-nm-wide lines was investigated for an attenuated PSM with annular illumination and an alternating PSM with normal illumination with a small σ of 0.3.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Minoru Sugawara, Akira Chiba, and Iwao Nishiyama "Phase-shift mask in EUV lithography", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.484433
Lens.org Logo
CITATIONS
Cited by 8 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photomasks

Phase shifts

Reflectivity

Ruthenium

Binary data

Refractive index

Nanoimprint lithography

Back to Top