Paper
16 June 2003 Predicting local thermomechanical distortions of the 200-mm EPL mask system
Author Affiliations +
Abstract
The timely development of a Next-Generation Lithography depends upon its progress in many technology-dependent areas. Common to all high-throughput systems is the requirement of strict mask distortion control. Thus, in support of the Nikon electron-beam projection lithography tool program, three-dimensional finite element (FE) models have been developed to simulate the transient thermal and structural response of a 200-mm prototype stencil mask during electron beam exposure. Due to the relative size of pattern features, equivalent modeling techniques were employed for computational expedience. Equivalent thermal properties (conductivity and emissivity) have been calculated for perforated membranes as a function of pattern void fraction. Resulting temperature distributions were used as input for the FE structural models to characterize and quantify the local displacement fields. The structural models also utilized equivalent material properties (elastic modulus, shear modulus and Poisson's ratio). Support conditions corresponded to electrostatic chucking with four symmetrically located pad regions. The FE simulations predicted that under typical exposure conditions, the localized thermal distortions within the individual subfields are all less than 1.0 nm, which is well below the allotted error budget.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Po-Tung Lee, Roxann L. Engelstad, Edward G. Lovell, Shintaro Kawata, Noriyuki Hirayanagi, and Michael R. Sogard "Predicting local thermomechanical distortions of the 200-mm EPL mask system", Proc. SPIE 5037, Emerging Lithographic Technologies VII, (16 June 2003); https://doi.org/10.1117/12.504552
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Cited by 2 scholarly publications.
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KEYWORDS
Photomasks

Semiconducting wafers

Electron beams

Reticles

Silicon

Prototyping

Thermal modeling

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