193-nm resist: ultralow voltage CD-SEM performance for sub-130-nm contact hole process

John E. Ferri; Marco Vieira; Mario Reybrouck; Martin E. Mastovich; Scott Bowdoin; Robert Brandom; Paul C. Knutrud

doi:10.1117/12.487597

2 June 2003 193-nm resist: ultralow voltage CD-SEM performance for sub-130-nm contact hole process

John E. Ferri, Marco Vieira, Mario Reybrouck, Martin E. Mastovich, Scott Bowdoin, Robert Brandom, Paul C. Knutrud

Proceedings Volume 5038, Metrology, Inspection, and Process Control for Microlithography XVII; (2003) https://doi.org/10.1117/12.487597
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

A preponderance of critical levels for the 90-nanometer (nm) process technology node utilize 193 nm lithography. The resist systems used in this processing show a much higher sensitivity to line width slimming at the traditional electron beam energies encountered in Critical Dimension Scanning Electron Microscope (CD SEM) metrology than do previous generations of chemically amplified resists. The uncertainty that results from this undesirable interaction can consume more than the entire process control budget for advanced devices. This paper reports measurements of resist CD uniformity taken with a new CD SEM metrology technology based on ultra low voltage, that significantly reduces the impact of the electron beam on 193 nm resist systems. Over the past several months this technology has been used for 193 nm resist development studies at ARCH Chemicals. Several examples, demonstrating the effectiveness of this new technology using the Yosemite Ultra Low voltage CD SEM will be presented and contrasted against results obtained at higher voltages.

Citation Download Citation

John E. Ferri, Marco Vieira, Mario Reybrouck, Martin E. Mastovich, Scott Bowdoin, Robert Brandom, and Paul C. Knutrud "193-nm resist: ultralow voltage CD-SEM performance for sub-130-nm contact hole process", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.487597

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