Paper
2 June 2003 New atomic force microscope method for critical dimension metrology
Takafumi Morimoto, Toru Shinaki, Yukio Kembo, Sumio Hosaka
Author Affiliations +
Abstract
We have developed a new atomic force microscope method that we call Step-in mode. The Step-in mode can realize a high aspect ratio structure observation without tip damage becasue of its unique probing method. Three types of high aspect ratio probe, a silicon probe sharpened by focused ion beam, a high density carbon probe and a carbon nanotube probe, are analyzed to make clear which probe is appropriate for high aspect ratio structure metrology. It is demonstrated that fine measurement can be carried out with all types of probes and we conclude that the high density carbon probe is the best at the present time. Experimental results show that the pitch repeatability for a standard grating sample is 1.2 nm at 3σ, height repeatability is 1.2nm at 3σ and width repeatability of a poly-silicon gate with side-wall is less than 3 nm at 3σ. It is also demonstrated that there is no tip damage after taking 1000 profiles of 512 data points in the Step-in mode. The experimental results show that the Step-in mode. The experimental results show that the Step-in mode has a potential for application to critical dimension metrology for a LSI process monitor.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Takafumi Morimoto, Toru Shinaki, Yukio Kembo, and Sumio Hosaka "New atomic force microscope method for critical dimension metrology", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.482813
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Cited by 10 scholarly publications and 1 patent.
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KEYWORDS
Atomic force microscopy

Silicon

Atomic force microscope

Critical dimension metrology

Metrology

Silicon carbide

Carbon

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