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2 June 2003 Simulation of repairing thin-film phase defect in masks for EUV lithography
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Abstract
Phase defects in extreme UV lithography masks made from Mo/Si multilayer thin films can be removed by heating the metal multilayer to produce a localized phase transition. The experimental situation has been simulated using a Monte Carlo method to determine the deposition of energy from the incident electrons, and the resultant elevation of temperature has been found by solving the thermal diffusion equation. The effects of operating parameters such as beam energy, beam current, and beam spot size have been investigated. It is shown that the effect of surface radiation cooling is negligible, and that only a steady state solution needs to be considered.
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Yeong-Uk Ko, David C. Joy, Scott Daniel Hector, and Bing Lu "Simulation of repairing thin-film phase defect in masks for EUV lithography", Proc. SPIE 5038, Metrology, Inspection, and Process Control for Microlithography XVII, (2 June 2003); https://doi.org/10.1117/12.485014
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