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12 June 2003 157-nm bilayer resist: patterning and etching performance
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Abstract
A highly transparent (60% transmittance at 120-nm thickness: abs.=1.85/μm), fluorine-containing, silsesquioxane-type resist for 157-nm lithography has been developed. When the resist was exposed with a 0.85-numerical-aperture (0.85-NA) microstepper and a phase-shifting mask, the high transmittance resulted in a steep profile for a 55-nm 1:1 line and space (L/S) pattern, as well as a feasible depth of focus (DOF) of 0.2 μm for a 100-nm contact hole (C/H) pattern. By using a 157-bi-layer resist process, which employed 120 nm of silsesquioxane-type resist as the top layer and a 200-nm-thick organic film as the underlayer, a sub-100-nm C/H pattern could be successfully fabricated and transferred to a 400-nm-thick SiO2 film by reactive ion etching (RIE). Neither pattern deformation during RIE nor residue after resist ashing was observed. The successful fabrication of a sub-100-nm C/H pattern in 400-nm-thick SiO2 clearly demonstrated the advantage of the 157-nm bi-layer resist process for fabricating sub-65-nm-node semiconductor devices, especially C/H fabrication or damascene process.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Seiro Miyoshi, Takamitsu Furukawa, Etsurou Kawaguchi, and Toshiro Itani "157-nm bilayer resist: patterning and etching performance", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.483769
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