Alicyclic photoresists for CO2-based microlithography at 157 nm

Mary Kate Boggiano; Joseph M. DeSimone

doi:10.1117/12.485093

12 June 2003 Alicyclic photoresists for CO₂-based microlithography at 157 nm

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485093
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Norbornene-based monomers were synthesized to include fluorinated moieties and/or chemical amplification switching groups. Polymers to be used as potential resist materials were synthesized from these monomers by addition polymerization using allylpalladium chloride dimmer. Monomers and polymers have been identified and partially characterized for important lithographic properties.

Citation Download Citation

Mary Kate Boggiano and Joseph M. DeSimone "Alicyclic photoresists for CO₂-based microlithography at 157 nm", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485093

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