Translator Disclaimer
12 June 2003 Anthracene-organosiloxane spin-on antireflective coating for KrF lithography
Author Affiliations +
A sacrificial, spin-on 248nm UV absorbing organosiloxane film has been developed to enable via first trench last (VFTL) dual-damascene patterning. Amongst other design objectives one key material requirement was that the film be SiO based to facilitate trench etch. Because our starting organosiloxane polymer is transparent a chromophores that absorbs at 248 nm had to be included. Anthracene was selected as it offered the largest amount of absorption per mole. Unfortunately, commercially available anthracene moieties with different functional groups when added directly to the organosiloxane polymer solution resulted in films of very marginal quality. The primary issue was the poor solubility and thermal stability of the anthracene compound within the organosiloxane matrix. To address this fundamental problem the chromophore was stabilized by chemically attaching it to ethyl-orthosilicate. The resulting molecule, 9-anthracene carboxy-methyl triethoxysilane (TESAC) was developed. By combining the appropriate amounts of TESAC, TEOS and other organo-TEOS monomers with the appropriate solvents and a catalyst a stable, 248nm light absorbing anthracene-organosiloxane polymer was developed. This work has led to the development of Duo248 organosiloxane based bottom antireflective coatings. Topics such as the development of TESAC, lithography, plasma etch and selective removal will be discussed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Joseph T. Kennedy, Teri Baldwin-Hendricks, Mello Hebert, and Arlene Suedmeyer "Anthracene-organosiloxane spin-on antireflective coating for KrF lithography", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003);


High Si content BARC for applications in dual BARC systems...
Proceedings of SPIE (December 04 2008)
Characterization Of A New Organosilicon Photoresist
Proceedings of SPIE (September 17 1987)
Bilayer resist approach for 193-nm lithography
Proceedings of SPIE (June 14 1996)
High Si content BARC for dual BARC systems such as...
Proceedings of SPIE (April 01 2009)
Developer soluble organic BARCs for KrF lithography
Proceedings of SPIE (June 12 2003)
Characteri Zation Cf A New Organ 3 Silicon Phcficiresist
Proceedings of SPIE (August 25 1987)

Back to Top