Paper
12 June 2003 Challenges of processing thick and ultrathick photoresist films
Mike Kubenz, Ute Ostrzinski, Freimut Reuther, Gabi Gruetzner
Author Affiliations +
Abstract
High viscous photoresists are required for the MEMS and MOEMS technology. Processing of thick and ultra-thick resist films is a challenging task. In this paper, procedures are presented to attain improved patterning results. Baking by infra-red radiation (IR baking) is described as an effective approach for effectively drying thick and ultra-thick resist layers. Patterning results are shown to confirm the performance and benefits of IR baking. Examples of up to 60μm thick layers of two positive tone resists, ma-P 100 and ma-P 1275 (micro resist technology GmbH, Germany), and up to 500 μm layers of chemically amplified negative tone photoresist SU-8 (MicroChem Newton, MA) are presented. IR baking allows reduced process time and lower bake temperature enabling high aspect ratio and low stress SU-8 layers.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mike Kubenz, Ute Ostrzinski, Freimut Reuther, and Gabi Gruetzner "Challenges of processing thick and ultrathick photoresist films", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485084
Lens.org Logo
CITATIONS
Cited by 10 scholarly publications.
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Photoresist materials

Coating

Lithography

Optical lithography

Infrared radiation

Photoresist processing

Semiconducting wafers

Back to Top