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12 June 2003 Comparison of ArF bilayer resists for sub-90 nm L/S fabrication
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The advent of 193nm ArF lithography opened new era of sub-90nm patterning in DRAM industry. ArF lithography in single layer scheme, however, has limitation in the substrate fabrication of sub-90nm L/S due to the decreased physical thickness of resist less that 3000Å and soft chemical structure of resist. Bilayer scheme, composed of Si-containing top PR and thick organic bottom layer, is gaining attention for its capability of patterning and control of resist thickness as a substitute for single layer. Several resists were evaluated for bilayer process in terms of photo patterning, dry development, bottom PR durability and SEM shrinkage. Resolution down to 80nm was achieved with Si content in the range of 8-9%. Etch selectivity in the dry development was a strong function of Si content and chemical structure of tope PR with pitch size dependence based on O2/N2 gas chemistry in dual frequency plasma tool. Profile control after dry development was subject to change depending on the gas ration (O2/N2) and power. Resist structure was proved to be a key factor in bottom PR durability at the substrate etch condition. Best combination of top and bottom resists in bilayer scheme will be discussed.
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Jin Hong, Hyun-Woo Kim, Sung-Ho Lee, Sang-Gyun Woo, Han-Ku Cho, and Woo-Sung Han "Comparison of ArF bilayer resists for sub-90 nm L/S fabrication", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003);

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