Paper
12 June 2003 Enhanced quantitative analysis of resist image contrast upon line- edge roughness (LER)
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Abstract
Correlations between LER and various types of aerial image contrast were examined for three different commercial resists. LER was more tightly correlated with the standard (max-min) definition of contrast than with the others examined, suggesting that background flare is most accountable for aerial image profile-induced LER. The relationship was nearly inverse, with LER proportional to α (contrast)-0.85. In the latter portion of this paper, an image deblurring technique to recover more accurate LER data from SEM images was devised. This technique showed that, at times, LER can vary significantly before and after deblurring. Some initial tests to prove the validity of this LER measurement enhancement technique were performed, all with positive results.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mike V. Williamson and Andrew R. Neureuther "Enhanced quantitative analysis of resist image contrast upon line- edge roughness (LER)", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485150
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CITATIONS
Cited by 12 scholarly publications.
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KEYWORDS
Line edge roughness

Scanning electron microscopy

Point spread functions

Image enhancement

Image restoration

Image processing

Photoresist materials

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