Evaluation of fluorinated dissolution inhibitors for 157-nm lithography

Alyssandrea H. Hamad; Francis M. Houlihan; Larry Seger; Chun Chang; Christopher Kemper Ober

doi:10.1117/12.485099

12 June 2003 Evaluation of fluorinated dissolution inhibitors for 157-nm lithography

Alyssandrea H. Hamad, Francis M. Houlihan, Larry Seger, Chun Chang, Christopher Kemper Ober

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485099
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Fluorinated diesters were synthesized and evaluated as dissolution inhibitors (DIs) for 157 nm lithography. The results of dissolution rate measurements, exposure studies, and etching experiments on blends of fluorinated polymers containing these dissolution inhibitors are reported. It was shown that the DIs effectively slow the dissolution rate of the matrix polymer, poly(hexafluorohydroxyisopropyl styrene) (PHFHIPS). Etching studies show that they enhance the plasma etch resistance of poly(methyl methacrylate) using tetrafluoromethane plasma. Addition of the best performing dissolution inhibitor, cyclohexane-1,4-dicarboxylic acid bis-(1-cyclohexyl-2,2,2-trifluoro-1-methyl-ethyl) ester) (FCDE1) to candidate 157 nm photoresist polymers, Duvcor and poly(hexafluorohydroxyisopropyl styrene)-co-poly(t-butyl methacrylate) [pPHFHIPS-co-pt-BMA], improves the imaging behavior of these polymers. Our attempts to elucidate the mechanism of dissolution inhibition for this series of compounds will be discussed. Fourier Transform Infrared (FTIR) studies in conjunction with dissolution rate measurements performed on a series of DI analogues suggest a mechanism based on hydrogen bonding.

Citation Download Citation

Alyssandrea H. Hamad, Francis M. Houlihan, Larry Seger, Chun Chang, and Christopher Kemper Ober "Evaluation of fluorinated dissolution inhibitors for 157-nm lithography", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485099

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