Paper
12 June 2003 Polarity effects of polymer on the 193-nm resist performance
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Abstract
Hydrophilicity of a resist film is a major property to determine the compatibility of resist film and substrates. By incorporation of polar groups in the side chain of polymer, the hydrophilicity of polymer, eventually, the hydrophilicity of a resist film can be modified. Since most developer for photoresist is aqueous alkaline solution, the polar side groups control not only interaction with a substrate but also dissolution rate of the resist film. We have synthesized model polymers having various polar groups, and investigated the effect of the polarity on the 193nm resist photographic behavior. Acid, lactone, ether, and alcohol were selected as polar groups. Among them, various lactone and alcohol functional groups were selected for further study on the effect of the side group bulkiness. Hydrophilicity of each functional group was estimated by Log P, which can be calculated using simulation program. From the calculation, aliphatic alcohol and lactone have the highest polarity and ether has the lowest. However, the bulkiness of alcohol increases, the polarity is getting lower than that of ether. Polarity and bulkiness of the polar monomers (acid, lactone, ether, and alcohol group) affect wettability against developer, collapse in 1:1 L/S patterns and adhesion to substrates. The resist films have different contact angles by polarity, bulkiness and content of these monomers in polymer. The polymer including lactone group shows excellent lithographic performance and minimizes pattern collapse in 1:1 L/S. Furthermore, we investigated contrast, pattern profile and process margin of 193nm resist according to the polymer polarity.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yong-Jun Choi, Jung-woo Kim, Jong-Yong Kim, Yoon-Gil Yim, Jae-Hyun Kim, Jaechang Jung, Myoung-Ja Min, Cheolkyu Bok, and Kisoo Shin "Polarity effects of polymer on the 193-nm resist performance", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485160
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Cited by 2 scholarly publications.
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KEYWORDS
Polymers

Polymer thin films

Lithography

193nm lithography

Silicon

Photoresist materials

Photoresist processing

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