Post soft-bake delay effect on CD variation in DUV resist

Shu-Fen Tsai; Chih-You Chen; King-Terk Chan; Hann-Yii Gao; Chin-Yu Ku

doi:10.1117/12.485092

12 June 2003 Post soft-bake delay effect on CD variation in DUV resist

Shu-Fen Tsai, Chih-You Chen, King-Terk Chan, Hann-Yii Gao, Chin-Yu Ku

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485092
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

In this work, the effect of delayed time after soft-bake process, which is normally called “Post Coat Delay (PCD)” or “Post Soft-bake Delay (PSD)”, on the critical dimension (CD) performance has been investigated for a DUV resist. The smallest contact hole is always found at the first processing wafer, and the contact size gradually returns to its normal CD value when other wafers are continuously running. The resist cross sections showed that the CD variation is caused by resist footing. We have found that the resist footing might come from the reaction between bottom anti-reflective coating (BARC) and hexamethyl disilazane (HMDS).

Citation Download Citation

Shu-Fen Tsai, Chih-You Chen, King-Terk Chan, Hann-Yii Gao, and Chin-Yu Ku "Post soft-bake delay effect on CD variation in DUV resist", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485092

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