Rinse liquid to improve pattern collapse behavior

Geunsu Lee; Sung-Koo Lee; Young-Sun Hwang; Jae-Chang Jung; Cheol-Kyu Bok; Seung-Chan Moon; Ki-Soo Shin

doi:10.1117/12.485175

12 June 2003 Rinse liquid to improve pattern collapse behavior

Geunsu Lee, Sung-Koo Lee, Young-Sun Hwang, Jae-Chang Jung, Cheol-Kyu Bok, Seung-Chan Moon, Ki-Soo Shin

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485175
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

We designed and prepared a test mask to study a pattern collapse (PC) and investigated a rinse dependency. We report the effect of surfactant and solvent in rinse. The collapse behavior was quantified in terms of the first collapsed critical dimension (FCCD) in 90nm L/S ArF resist patterns. In-house rinse liquids (SE series) showed relatively lower surface tension (ST) compared to commercial one. They greatly reduced pattern collapse behavior (PCB) of from FCCD 102nm to 85nm L/S using these solutions. However, SE-100 showed defect by bubble and the others show bad compatibility with photoresist. SES-100 is the only rinse liquid candidate in this experiment.

Citation Download Citation

Geunsu Lee, Sung-Koo Lee, Young-Sun Hwang, Jae-Chang Jung, Cheol-Kyu Bok, Seung-Chan Moon, and Ki-Soo Shin "Rinse liquid to improve pattern collapse behavior", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485175

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