X-ray absorption spectroscopy to probe interfacial issues in photolithography

Joseph L. Lenhart; Daniel A. Fischer; Sharadha Sambasivan; Eric K. Lin; Ronald L. Jones; Christopher L. Soles; Wen-li Wu; Dario L. Goldfarb; Marie Angelopoulos

doi:10.1117/12.485149

12 June 2003 X-ray absorption spectroscopy to probe interfacial issues in photolithography

Joseph L. Lenhart, Daniel A. Fischer, Sharadha Sambasivan, Eric K. Lin, Ronald L. Jones, Christopher L. Soles, Wen-li Wu, Dario L. Goldfarb, Marie Angelopoulos

Author Affiliations +

Proceedings Volume 5039, Advances in Resist Technology and Processing XX; (2003) https://doi.org/10.1117/12.485149
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

We utilize near edge X-ray absorption fine structure spectroscopy (NEXASFS) to provide detailed chemical insight into two interfacial problems facing sub-100 nm patterning. First, chemically amplified photo-resists are sensitive to surface phenomenon, which causes deviations in the pattern profile near the interface. Striking examples include T-topping, closure, footing, and undercutting. NEXAFS was used to examine surface segregation of a photo-acid generator at the resist/air interface and to illustrate that the surface extent of deprotection in a model resist film can be different than the bulk extent of deprotection. Second, line edge roughness becomes increasingly critical with shrinking patterns, and may be intimately related to the line edge deprotection profile. A NEXAFS technique to surface depth profile for compositional gradients is described with the potential to provide chemical information about the resist line edge.

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Joseph L. Lenhart, Daniel A. Fischer, Sharadha Sambasivan, Eric K. Lin, Ronald L. Jones, Christopher L. Soles, Wen-li Wu, Dario L. Goldfarb, and Marie Angelopoulos "X-ray absorption spectroscopy to probe interfacial issues in photolithography", Proc. SPIE 5039, Advances in Resist Technology and Processing XX, (12 June 2003); https://doi.org/10.1117/12.485149

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