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26 June 2003 Characterization and improvement of field CD uniformity for implementation of 0.15-μm technology device using KrF stepper
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Abstract
xAs the design rule of semiconductor device shrinks, the field CD uniformity gets more important. For mass production of 0.15 μm technology device using KrF stepper having 0.63NA, the improvement of field CD uniformity was one of key issues because field CD uniformity is directly related to device characteristics in some layers. We have experienced steppers that show poor illumination uniformity. With those steppers there was large CD difference of about 10nm between field center and field edges as shown in Figure 1. Although we were using verified reticles, we could not get an acceptable CD uniformity in a field with those steppers. The Field CD uniformity is dominantly dependent of the illumination uniformity of stepper and mask quality. With these optimization, we could control DICD difference between field center and edge to be less than 5nm. In this paper, we characterized the dependency of field CD uniformity according to illumination systems with stepper and scanner, annular illumination uniformity at various stigma, mask CD uniformity and the several types of novel gray filter specifically developed.
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Yoon-Suk Hyun, Dong-Joo Kim, Cha-Won Koh, Sung-Nam Park, and Won-Taik Kwon "Characterization and improvement of field CD uniformity for implementation of 0.15-μm technology device using KrF stepper", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485400
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