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26 June 2003 Enhancement of CD uniformity and throughput with KrF photomask repeater
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Abstract
It is intended to clarify the feasibity of 0.15 μm generation mask fabrication with the photomask repeater that is based on a KrF stepper(step-and-repeat exposure system). In a photomask repeater patterning, a daughter mask is exposed to KrF light through a mother mask. Inter-field registration accuracy(3sigma) is 14 nm in X direction and 28nm in Y direction within a 80mm ×100mm area on a daughter mask and intra-field registration accuracy(3sigma) is 21nm in X direction and 26nm in Y direction within a 18.4mm ×23.0mm field on a daughter mask. Inter-field CD uniformity (3sigma) is 8nm in 100mm ×100mm area on a daughter mask and intra-field CD uniformity (3sigma) is 24nm within a 18.4mm ×23.0mm field on a daughter mask. The errors of registration and CD within a field can be improved by compensating for these errors to a mother mask. With the compensation, the intra-field registration error can be reduced to about 13.5nm and the intra-field CD uniformity (3sigma) can be improved into 15nm. Pattern fidelity in the KrF photomask repeater is inferior to that in the e-beam process. So we need to apply OPC pattern to a mother mask in order to get an equivalent pattern fidelity to profiles in the e-beam process.
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Tae-Joong Ha, Yong-Kyoo Choi, and Oscar Han "Enhancement of CD uniformity and throughput with KrF photomask repeater", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485359
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