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26 June 2003 Feasibility study of SCAAM-type Alt-PSM for 157-nm lithography
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Alternating Phase Shifting Mask (Alt-PSM) technology is one of the most effective Resolution Enhancement Technology (RET). It has been used for current optical lithography and will be used for 157nm lithography also. Considering about topographic structure of Alt-PSM, current etched quartz with undercut structure will be very difficult to be applied for 157nm Alt-PSM because undercut structure limits mechanical durability at narrower chrome width. To solve this problem, Side-wall Chrome Alternating Aperture Mask (SCAAM) is proposed. This structure has the characteristics of “There is no undercut”, “Ideal topographic structure for lithography (All quartz steps are covered by chrome film which means very few refracted light at quartz side-wall will go through chrome film and affect printing results compared with conventional etched quartz type Alt-PSM)”. We fabricated SCAAM type Alt-PSM for 157nm lithography and printed by using 157nm microstepper with a 0.85-NA lens. In this report, we will show preliminary printing results of using SCAAM and which will be compared with the results of using conventional etched quartz type Alt-PSM.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yasutaka Morikawa, Haruo Kokubo, Kenji Noguchi, Shiho Sasaki, Hiroshi Mohri, Morihisa Hoga, Noriyoshi Kanda, Shigeo Irie, Kunio Watanabe, Toshifumi Suganaga, and Toshiro Itani "Feasibility study of SCAAM-type Alt-PSM for 157-nm lithography", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003);

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