Limits of strong phase-shift patterning for device research

Michael Fritze; Renee D. Mallen; Bruce Wheeler; Donna Yost; John P. Snyder; Bryan S. Kasprowicz; Benjamin George Eynon; Hua-Yu Liu

doi:10.1117/12.485332

26 June 2003 Limits of strong phase-shift patterning for device research

Michael Fritze, Renee D. Mallen, Bruce Wheeler, Donna Yost, John P. Snyder, Bryan S. Kasprowicz, Benjamin George Eynon, Hua-Yu Liu

Author Affiliations +

Proceedings Volume 5040, Optical Microlithography XVI; (2003) https://doi.org/10.1117/12.485332
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Advanced transistor research requires the patterning of isolated gate feature sizes well below available illumination wavelengths. In this work, we explore the limits of imaging isolated line features using double exposure strong phase shift methods and 248 nm illumination. Fundamental issues such as aerial image size,flare, simple OPC and resist aspect ratio will be addressed. Non-lithographic feature slimming methods such as UV-bake, etch biasing and oxidation will we explored as well. It is desirable that feature slimming processing also reduce line-edge roughness. Using a combination of strong PSM imaging and feature slimming, we have developed processes for the fabrication of sub-25 nm gate features required by our Schottky Barrier transistor device development efforts.

Citation Download Citation

Michael Fritze, Renee D. Mallen, Bruce Wheeler, Donna Yost, John P. Snyder, Bryan S. Kasprowicz, Benjamin George Eynon, and Hua-Yu Liu "Limits of strong phase-shift patterning for device research", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485332

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