Optical lithography at half the Rayleigh resolution limit by two-photon absorption resist

Hiromi Ezaki; Masato Shibuya

doi:10.1117/12.485500

26 June 2003 Optical lithography at half the Rayleigh resolution limit by two-photon absorption resist

Hiromi Ezaki, Masato Shibuya

Proceedings Volume 5040, Optical Microlithography XVI; (2003) https://doi.org/10.1117/12.485500
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Recently, it has shown that Rayleigh diffraction limit (a size λ/2) is overcome using entangled-photon pairs, where λ is the optical wavelength. However, the intensity of the entangled-photon pairs generated from optical parametric down-conversion are so weak that it is not enough to attain the practical throughput. We propose a new method which enables to enhance the resolution over the Rayleigh limit with coherent laser light by using polarization-dependent two-photon absorption resist.

Citation Download Citation

Hiromi Ezaki and Masato Shibuya "Optical lithography at half the Rayleigh resolution limit by two-photon absorption resist", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485500

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