Process latitude extension in low-k1 DRAM lithography using specific layer-oriented illumination design

Young Seog Kang; Dong-Seok Nam; Chan Hwang; Sang-Gyun Woo; Han-Ku Cho; Woo-Sung Han

doi:10.1117/12.485384

26 June 2003 Process latitude extension in low k₁ DRAM lithography using specific layer-oriented illumination design

Young Seog Kang, Dong-Seok Nam, Chan Hwang, Sang-Gyun Woo, Han-Ku Cho, Woo-Sung Han

Proceedings Volume 5040, Optical Microlithography XVI; (2003) https://doi.org/10.1117/12.485384
Event: Microlithography 2003, 2003, Santa Clara, California, United States

Abstract

Improvement of process latitude is tested in typical DRAM patterns by using the optimized illumination for each layer pattern. The optimized illumination for a specific layer is generated by modifying the Fourier transformed image of the layer and by using in-house illumination optimization program, which can simulate the maximum process latitude. These illumination shapes are compared with each other, and it is confirmed that both illuminations are similar in shape. The typical DRAM patterns are exposed using the optimized illuminations, and the process latitude is compared with typical annular illumination cases. It is certain that the process latitude using the optimized illumination is greater than the high sigma annular illumination. By using the optimized illumination, the enlarged process latitude makes it possible to use lower grade tools for a critical layer. It is expected that the lifetime of low-grade exposure tools can be extended by this illumination optimization technique.

Citation Download Citation

Young Seog Kang, Dong-Seok Nam, Chan Hwang, Sang-Gyun Woo, Han-Ku Cho, and Woo-Sung Han "Process latitude extension in low k₁ DRAM lithography using specific layer-oriented illumination design", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485384

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