Despite very intense work since its re-discovery in the early 1990’s, phase-shift lithography is only in limited use today. The reason for its lack of wide spread use is not performance, for the benefits of phase-shift lithography are very well documented in the literature. The problem has been the greater complexity involved in making phase shirt masks, the inspection and repair of defects, and in dealing with phase-shift conflicts and other layout problems. The phase shift approach most commonly used is attenuated phase-shift. This is not very surprising in view of the fact that this phase-shift approach requires only one write-pass; and the inspection, repair and OPC are less difficult than the other phase-shift options. Despite these shortcomings, work on phase shift continues as we push resolution and extend the life of optical microlithography. The reason is that the alternatives, 157 nm and next-generation lithography, have its own set of issues. As we come to grips with the complexities of working in the vacuum region of the spectrum, we realize that 157 nm is likely to be delayed, and more expensive than originally thought. All next generation lithography options require a great deal of new infrastructure, with it associated coast. In this paper we report on a self-aligned rim phase shift approach. There have been reports of self-aligned rim phase shift approaches before, however our approach is unique in that it only requires one write-pass. This significantly simplifies the mask-making process.