Paper
26 June 2003 Status 157-nm lithography development at IMEC
Kurt G. Ronse, Peter De Bisschop, Astrid Eliat, Anne-Marie Goethals, Jan Hermans, Rik Jonckheere, Dieter Van Den Heuvel, Frieda Van Roey, Stephan Beckx, Johan M.D. Wouters, Jean-Francois de Marneffe, Timothy O'Neil, Bruce Tirri, Harry Sewell
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Abstract
157nm lithography is currently considered as the main technology for the manufacturing of critical 65nm node layers and beyond. After a number of potential show stoppers of 157nm have been removed in the last three years, the final phase of development will now start based on the first full-field step and scan exposure systems, that will be inserted in the next 6 months. This paper describes the status and progress of the IMEC 157nm program, that is aiming to remove the remaining 157nm engineering challenges. Despite the fact that the first full field scanner (ASML Micrascan VII) will ship next month to IMEC, the investigation on a number of full-field issues already started. Results on reticle handling including vacuum ultra violet cleaning, on hard pellicle printing and on 157nm resist full field patterning are discussed in this paper.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kurt G. Ronse, Peter De Bisschop, Astrid Eliat, Anne-Marie Goethals, Jan Hermans, Rik Jonckheere, Dieter Van Den Heuvel, Frieda Van Roey, Stephan Beckx, Johan M.D. Wouters, Jean-Francois de Marneffe, Timothy O'Neil, Bruce Tirri, and Harry Sewell "Status 157-nm lithography development at IMEC", Proc. SPIE 5040, Optical Microlithography XVI, (26 June 2003); https://doi.org/10.1117/12.485513
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KEYWORDS
Pellicles

Etching

Lithography

Reticles

Photomasks

Semiconducting wafers

Optical lithography

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