Device characteristics of sub-20-nm silicon nanotransistors

Samar Saha

doi:10.1117/12.485268

Translator Disclaimer

10 July 2003 Device characteristics of sub-20-nm silicon nanotransistors

Samar Saha

Author Affiliations +

Proceedings Volume 5042, Design and Process Integration for Microelectronic Manufacturing; (2003) https://doi.org/10.1117/12.485268
Event: Advanced Microelectronic Manufacturing, 2003, Santa Clara, CA, United States

Abstract

This paper presents a systematic simulation-based study on the design, performance, and scaling issues of sub-20 nm silicon nanotransistors. 3D-process simulation was used to generate silicon FinFET device structures with fin thickness (T_fin) of 10 to 30 nm, fin height (H_fin) of 50 nm, channel length (Lg) of 10 to 50-nm, and gate oxide thickness (T_ox(eff)) of 1.5 nm. 3D-device simulation results show that for n-channel FinFETs with H_fin = 50 nm, threshold voltage (V_th) decreases as Lg decreases and V_th roll-of with decreasing Lg is higher for thicker T_fin devices. The simulated drive current (I_DSAT) decreases as T_fin decreases for Lg≤ 25 nm while I_DSAT increases as T_fin decreases for Lg ≥ 25 nm. It is, also, found that for the devices with H_fin = 50 nm, the simulated subthreshold swing (S) increases as Lg decreases for all devices with 10 nm ≤ T_fin ≤ 30 nm and approaches to 60 mV/decade for Lg≥ 40 nm. Also, S decreases as T_fin decreases for Lg< 40 nm devices. The simulated data for 20 nm nFinFETs with H_fin = 50 nm, T_fin = 10 nm, and T_OX(eff) = 1.5 nm show an excellent device performance with V_th ≡ 0.13 V, IDSAT ≡ 775 μA/μm, Ioff ≡ 3 μA/μm, and S ≡ 83 mV/decade. Finally the simulation results for 20 nm nFinFETs and the conventional nMOSFETs were compared. This study, clearly, demonstrates a superior performance and scalability of FinFETs down to near 10 nm regime.

Citation Download Citation

Samar Saha "Device characteristics of sub-20-nm silicon nanotransistors", Proc. SPIE 5042, Design and Process Integration for Microelectronic Manufacturing, (10 July 2003); https://doi.org/10.1117/12.485268

ACCESS THE FULL ARTICLE