Exposure-focus critical dimension feedback control in 300-mm manufacturing technologies

Anju Narendra; Steven L. Carson; Cynthia Morrison

doi:10.1117/12.485312

1 July 2003 Exposure-focus critical dimension feedback control in 300-mm manufacturing technologies

Anju Narendra, Steven L. Carson, Cynthia Morrison

Proceedings Volume 5044, Advanced Process Control and Automation; (2003) https://doi.org/10.1117/12.485312
Event: Advanced Microelectronic Manufacturing, 2003, Santa Clara, CA, United States

Abstract

Control of DCCDs (Develop Check Critical Dimension) is a key aspect of successfully manufacturing semiconductors at Intel. DCCD control was formerly achieved through manual adjustments of the exposure dose on the tool to account for the known effects of non-stationary tool/process drift. An automated application EFCC (Exposure-Focus CD Control) was developed at Intel, to create a robust algorithm and automated implementation, replacing the manual adjustment process. The EFCC algorithm uses DCCD summary measurements as the feedback to the stepper. At the stepper, the exposure setting is adjusted to correct for non-stationary tool/process drift. A weighted average of data from previous lots is used to determine the recommended exposure dose settings. The feedback scheme weights prior lots using a combination of traditional EWMA based weighting and within lot (across sites on wafer) variance based weighting. The EFCC implementation has benefits in increased Cpk, reduced rework, continuous adjustment. Futhermore, as this is an automated control solution, it can easily be extended to support more sophisticated adjustment algorithms.

Citation Download Citation

Anju Narendra, Steven L. Carson, and Cynthia Morrison "Exposure-focus critical dimension feedback control in 300-mm manufacturing technologies", Proc. SPIE 5044, Advanced Process Control and Automation, (1 July 2003); https://doi.org/10.1117/12.485312

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