Radiation Response Of A Radiation-Hardened Si Photodiode Incorporating A Sinker Diffusion

T. A. Fischer; J. J. Wiczer

doi:10.1117/12.944930

15 October 1984 Radiation Response Of A Radiation-Hardened Si Photodiode Incorporating A Sinker Diffusion

T. A. Fischer, J. J. Wiczer

Proceedings Volume 0506, Fiber Optics in Adverse Environments II; (1984) https://doi.org/10.1117/12.944930
Event: 28th Annual Technical Symposium, 1984, San Diego, United States

Abstract

A commercially available, epitaxially-grown, Si photodiode was irradiated with 18 MeV electrons, 1-10 MeV x-rays, and neutrons from a pulsed reactor. The device structure is given, the radiation-hardened design features are discussed and their inherent limitations are identified. The ionizing radiation sensitivity and neutron-induced, permanent damage to quantum efficiency and leakage current have been measured. Empirical fits to the data are presented to aid optoelectronic sub-system designers in predicting device performance in various radiation environments.

Citation Download Citation

T. A. Fischer and J. J. Wiczer "Radiation Response Of A Radiation-Hardened Si Photodiode Incorporating A Sinker Diffusion", Proc. SPIE 0506, Fiber Optics in Adverse Environments II, (15 October 1984); https://doi.org/10.1117/12.944930

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