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14 October 2003 Polysilicon piezoresistive pressure sensor using silicon-on-insulator (SOI) approach
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Proceedings Volume 5062, Smart Materials, Structures, and Systems; (2003) https://doi.org/10.1117/12.514725
Event: Smart Materials, Structures, and Systems, 2002, Bangalore, India
Abstract
In this paper, the design and fabrication of polysilicon piezoresistive pressure sensor are presented. The design considerations such as the membrane thickness and the arrangement pattern of polysilicon piezo-resistors on the membrane are discussed with emphasis on the use of SOI approach. The results obtained on the pressure sensors and the temperature coefficient of resistivity of polysilicon resistors are presented. The results presented include the electrical trimming of polysilicon resistors for compensating zero offset voltage in the pressure sensors.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kunchinadka Narayana Hari Bhat, Enakshi Bhattacharya, Amitava DasGupta, Nandita DasGupta, Bhimanadhuni R. KotiReddy, Parimi Ramaseshagiri Rao, and Krishnan Balasubramaniam "Polysilicon piezoresistive pressure sensor using silicon-on-insulator (SOI) approach", Proc. SPIE 5062, Smart Materials, Structures, and Systems, (14 October 2003); https://doi.org/10.1117/12.514725
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