Radiation thermometer configured for GaAs molecular beam epitaxy

S. E. Aleksandrov; Gennadii A. Gavrilov; A. A. Kapralov; Galina Yu. Sotnikova; Dmitri F. Chernykh; Andrey N. Alexeev; A. P. Shkurko

doi:10.1117/12.501551

19 June 2003 Radiation thermometer configured for GaAs molecular beam epitaxy

S. E. Aleksandrov, Gennadii A. Gavrilov, A. A. Kapralov, Galina Yu. Sotnikova, Dmitri F. Chernykh, Andrey N. Alexeev, A. P. Shkurko

Author Affiliations +

Proceedings Volume 5066, Lasers for Measurements and Information Transfer 2002; (2003) https://doi.org/10.1117/12.501551
Event: Lasers for Measurements and Information Transfer 2002, 2002, St. Petersburg, Russian Federation

Abstract

The optical pyrometer configured for precision temperature control of GaAs wafer surface during the MBE growth is presented. The calibration technique for absolute surface temperature measurements based on RHEED observation directly before and during epitaxial growth, allows to minimize an for absolute temperature determination and practically invalidates the influence of pyrometers window coating by growth materials.

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S. E. Aleksandrov, Gennadii A. Gavrilov, A. A. Kapralov, Galina Yu. Sotnikova, Dmitri F. Chernykh, Andrey N. Alexeev, and A. P. Shkurko "Radiation thermometer configured for GaAs molecular beam epitaxy", Proc. SPIE 5066, Lasers for Measurements and Information Transfer 2002, (19 June 2003); https://doi.org/10.1117/12.501551

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