Ultrafast phase transitions in Ge1Sb2Te4 films induced by femtosecond laser beam

Qing Fang Wang; L. P. Shi; Z. B. Wang; B. Lan; K. J. Yi; Ming Hui Hong; Tow Chong Chong

doi:10.1117/12.532649

16 September 2003 Ultrafast phase transitions in Ge₁Sb₂Te₄ films induced by femtosecond laser beam

Qing Fang Wang, L. P. Shi, Z. B. Wang, B. Lan, K. J. Yi, Ming Hui Hong, Tow Chong Chong

Proceedings Volume 5069, Optical Data Storage 2003; (2003) https://doi.org/10.1117/12.532649
Event: Optical Data Storage 2003, 2003, Vancouver, Canada

Abstract

Ultrafast phase transitions triggered by single femtosecond laser pulse in Ge₁Sb₂Te₄ films were investigated. By proper control of the film thickness, ultrafast crystalline and amorphous phase transformations have been achieved in Ge₁Sb₂Te₄ films. These utlrafast phase transitions were confirmed by reflectivity change and x-ray diffraction measurement.

Citation Download Citation

Qing Fang Wang, L. P. Shi, Z. B. Wang, B. Lan, K. J. Yi, Ming Hui Hong, and Tow Chong Chong "Ultrafast phase transitions in Ge₁Sb₂Te₄ films induced by femtosecond laser beam", Proc. SPIE 5069, Optical Data Storage 2003, (16 September 2003); https://doi.org/10.1117/12.532649

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