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Lead chalcogenides are successfully applied at sensors of infrared radiation, thermoelectrical devices, thermogenerator, photoresistances, photodiodes, lasers, tensometers etc. Under high pressures above 2.5 - 6 GPa lead chaclogenides are known to suffer phase transitions, but up to now the thermoelectric properties of these materials at high pressure were unknown. In recent papers it was shown that heterophase state of material, which is being forming in the vicinity of semiconductor-metal phase transformations may be considered as a model of layer fabricated systems. As the most properties being dependent on the concentration and configuration of phases inclusions these materials may be used in engineering. For example, semiconductor-metal phase transitions induced by nanosecond heating and cooling of small regions of the memory cell are known to be using for nonvolatile memory develop. Recently the new technique of thermomagnetic measurements allowing to test a micro-samples of semiconductors have been developed at high pressure up to 30 GPa. The technique was applied for determination of scattering mechanisms and mobilities of charge carriers of direct-gap semiconductors Te, Se at ultrahigh pressure up to 30 GPa. The above measurements seems to be perspective for implementation to microelectronic manufacturing and MEMS technologies, for example, in modeling, quality control or testing of integrated circuit (IC). In present paper the thermo- and galvanomagnetic properties of micro-samples ~ 200×200×20 mkm of lead chalcogenides (PbS, PbSe, PbTe) at high pressure are investigated. The data of transverse magnetoresistance (MR) and also transverse and longitudinal Nernst-Ettingshausen (N-E) effects of lead chalcogenides both for initial and new phases, and also for heterophase states in the vicinity of phase transformations at high pressure are presented. One may suppose that the effects observed will find an interesting applications in thermosense industry. The work is supported by the Russian Foundation for Basic Research, Gr. No. 01-02-17203.
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