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10 October 2003 Development of a visible-NIR/LWIR QWIP sensor
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Quantum Well Infrared Photodetectors (QWIPs) based infrared focal plane arrays (FPAs) have been widely researched and investigated in the 3-5 μm and 6-20 μm wavelength ranges. The demonstrations of QWIP FPAs include single-color, dual-color and even multiple-color, as well as varieties of physical formats in the infrared range. In this paper, we discuss the research and development efforts currently undergoing at QWIP Technologies on dual-color, visible-NIR/LWIR FPAs, as an interim step for a project sponsored by DARPA (Defense Advanced Research Project Agency) to develop a four-color QWIP-based FPA. To the best of our knowledge, this is the first reported result on visible/LWIR QWIP imager, as well as the first reported GaAs PIN diode-based FPA. This device consists of a GaAs/AlGaAs based PIN diode grown on a GaAs substrate, and subsequently a stack of multiple quantum wells (MQWs), epitaxially grown on top of the PIN structure. This VISA (visible/infrared sensor array) structure is sensitive in the 500nm-890nm as well as in the 8um-12 um wavelength ranges. Very high sensitivities are observed from both visible PIN diode and LWIR QWIP; both visible and LWIR images obtained from this device are presented in this paper.
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Eric Cho, Barbara K. McQuiston, Wah Lim, Sir B. Rafol, Cynthia Hanson, Richard Nguyen, and Andy Hutchinson "Development of a visible-NIR/LWIR QWIP sensor", Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003);

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