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10 October 2003 Small two-dimensional and linear arrays of polycrystalline SiGe microbolometers at IMEC-XenICs
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The state-of-the-art characteristics of polycrystalline SiGe microbolometer arrays are reported. An NETD of 100 mK at a time constant of 25 ms is achievable on 14×14 and 200×1 arrays at the system level. It is the result of joint studies targeted at 1/f noise decrease, as well as TCR and uniformity improvements together with the design optimization. Thanks to successful decrease of 1/f noise of SiGe, the arrays were moved from "1/f-noise limited" to "system limited," i.e. to the case of VOx arrays. The mechanical design of pixels was improved affording very precise tuning of the infrared quarter-wave resonant cavity. The resistance and TCR non-uniformity with σ/μ better than 0.2% combined with about 1% noise nonuniformity and 100% pixel operability are demonstrated. The first lots of arrays with 99.98% production pixel yield have already been characterized and the results are being reported.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir N. Leonov, Ybe Creten, Piet De Moor, Bert Du Bois, Claus Goessens, Bob Grietens, Patrick Merken, Natalia A. Perova, Gerlinde Ruttens, Chris A. Van Hoof, Agnes Verbist, and Jan P. Vermeiren "Small two-dimensional and linear arrays of polycrystalline SiGe microbolometers at IMEC-XenICs", Proc. SPIE 5074, Infrared Technology and Applications XXIX, (10 October 2003);


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