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15 August 2003 Fixed wavelength selection for the far-infrared p-Ge laser using patterned silicon etched mirrors
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Abstract
An etched silicon gold plated lamellar mirror is demonstrated as a fixed-wavelength intracavity selector for the far-infrared p-Ge laser, facilitating spectroscopic applications. The depth of the selective mirror, which defines the laser operation wavelength, can be precisely controlled during the etching process. The third-order Fabry-Perot resonance of this selector yields an active cavity finesse of at least 0.06.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Todd W. Du Bosq, Robert E. Peale, Eric W. Nelson, Andrei V. Muravjov, Deron A. Walters, Ganesh Subramanian, Kalpathy B. Sundaram, and Chris J. Fredricksen "Fixed wavelength selection for the far-infrared p-Ge laser using patterned silicon etched mirrors", Proc. SPIE 5085, Chemical and Biological Sensing IV, (15 August 2003); https://doi.org/10.1117/12.485790
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