You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
8 May 2003Fast and ultrasensitive nanomechanical displacement detection based on the single electron transistor
We review recent experimental and theoretical work towards the realization of a fast and ultrasensitive, nanomechanical displacement detector based on the radio frequency single electron transistor (rf-SET).
Miles P. Blencowe
"Fast and ultrasensitive nanomechanical displacement detection based on the single electron transistor", Proc. SPIE 5115, Noise and Information in Nanoelectronics, Sensors, and Standards, (8 May 2003); https://doi.org/10.1117/12.496961
The alert did not successfully save. Please try again later.
Miles P. Blencowe, "Fast and ultrasensitive nanomechanical displacement detection based on the single electron transisitor," Proc. SPIE 5115, Noise and Information in Nanoelectronics, Sensors, and Standards, (8 May 2003); https://doi.org/10.1117/12.496961