Low-frequency noise in GaN-based two-dimensional structures

Serguei L. Roumiantsev; Michael S. Shur

doi:10.1117/12.498864

29 April 2003 Low-frequency noise in GaN-based two-dimensional structures

Proceedings Volume 5118, Nanotechnology; (2003) https://doi.org/10.1117/12.498864
Event: Microtechnologies for the New Millennium 2003, 2003, Maspalomas, Gran Canaria, Canary Islands, Spain

Abstract

We will discuss results of the experimental and theoretical study of the low-frequency noise in GaN/AlGaN 2D structures and examine possible sources of noise, including contacts, surface and 2D channel itself. 2D GaN/AlGaN heterostructures exhibit a much smaller level of 1/f noise than bulk GaN films. In the frame of model linking noise to the tail states, this might be explained by a high degeneracy of the 2D electrons in this structures. Due to the electron degeneracy, the tail states mechanism of the 1/f noise is suppressed in GaN-based 2D structures. Our measurements show that contacts do not contribute much to overall low frequency noise. Concentration dependence of the Hooge parameter points out to the tunneling mechanism of noise in these structures.

Citation Download Citation

Serguei L. Roumiantsev and Michael S. Shur "Low-frequency noise in GaN-based two-dimensional structures", Proc. SPIE 5118, Nanotechnology, (29 April 2003); https://doi.org/10.1117/12.498864

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