Paper
29 April 2003 Modeling of experimental reflectance of porous silicon multilayers
Cecilio Hernandez-Rodriguez, Ventura M. Hernandez, Nestor E. Capuj, Nuria M. Marrero, Ricardo Guerrero-Lemus
Author Affiliations +
Proceedings Volume 5118, Nanotechnology; (2003) https://doi.org/10.1117/12.498950
Event: Microtechnologies for the New Millennium 2003, 2003, Maspalomas, Gran Canaria, Canary Islands, Spain
Abstract
This work exposes a computational simulation method to describe the infrared reflectance on periodical and effective media. We use this method in order to improve the parameters to design porous silicon multilayers (PSM). The procedure of the computer program takes into account the complex refractive index of each layer by using the effective dielectric constant for different porosities. The lateral inhomogeneity of the thickness for the successive layers are simulated using the thickness as a random function around one mean value. Averaging all the reflectance values and iterating the computational process for different random parameters gives the reflectance results of the model. We also show in this work the experimental reflectance spectrum for a PSM dielectric Bragg reflector. The comparison of the experimental spectrum and the simulations shows a good agreement in bandwidth and position of the maximum reflectance band.
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Cecilio Hernandez-Rodriguez, Ventura M. Hernandez, Nestor E. Capuj, Nuria M. Marrero, and Ricardo Guerrero-Lemus "Modeling of experimental reflectance of porous silicon multilayers", Proc. SPIE 5118, Nanotechnology, (29 April 2003); https://doi.org/10.1117/12.498950
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KEYWORDS
Reflectivity

Silicon

Picosecond phenomena

Refractive index

Dielectrics

Computer simulations

Electrochemical etching

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