Surface morphology and photoluminescence of InAs quantum dots grown on [110]-oriented streaked-islands under ultralow V/III ratio

Shiang Feng Tang; Shih Yen Lin; S. T. Yang; ChengDer Chiang; Ya-Tung Cherng; H. T. Shen; T. E. Nee; Ray Ming Lin; Min Yu Hsu

doi:10.1117/12.498276

29 April 2003 Surface morphology and photoluminescence of InAs quantum dots grown on [110]-oriented streaked-islands under ultralow V/III ratio

Shiang Feng Tang, Shih Yen Lin, S. T. Yang, ChengDer Chiang, Ya-Tung Cherng, H. T. Shen, T. E. Nee, Ray Ming Lin, Min Yu Hsu

Author Affiliations +

Proceedings Volume 5118, Nanotechnology; (2003) https://doi.org/10.1117/12.498276
Event: Microtechnologies for the New Millennium 2003, 2003, Maspalomas, Gran Canaria, Canary Islands, Spain

Abstract

We present results concerning the influence of organometrallic vapro phase epitaxy (OMVPE) grwoth paramters under ultra low V/III ratio on the surface morphology and temperature-dependent photoluminescence. Due to Indium segregation inteh 2D InAs wetting layers and accumulation from multi-atomic step edge on (001) 2° off toward (111) n-type GaAs substrate, self-assembled InAs quatnum dot formation takes pace aroudn or above 2D InAs islands while ~ one monolayer of InAs is regularly grown on GaAs substrate. It is attributed that the desorbed Indium Recaptured and nucleated effect on edge along (110)-orientation of GaAs substrate.

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Shiang Feng Tang, Shih Yen Lin, S. T. Yang, ChengDer Chiang, Ya-Tung Cherng, H. T. Shen, T. E. Nee, Ray Ming Lin, and Min Yu Hsu "Surface morphology and photoluminescence of InAs quantum dots grown on [110]-oriented streaked-islands under ultralow V/III ratio", Proc. SPIE 5118, Nanotechnology, (29 April 2003); https://doi.org/10.1117/12.498276

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