Hot-carrier transport governed optical nonlinearities in dc-biased GaAs crystals

Irmantas Kasalynas; Liudvikas Subacius; Ramunas Aleksiejunas; Kestutis Jarasiunas

doi:10.1117/12.515804

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8 August 2003 Hot-carrier transport governed optical nonlinearities in dc-biased GaAs crystals

Irmantas Kasalynas, Liudvikas Subacius, Ramunas Aleksiejunas, Kestutis Jarasiunas

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Proceedings Volume 5122, Advanced Organic and Inorganic Optical Materials; (2003) https://doi.org/10.1117/12.515804
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Hot carrier dynamics and related optical nonlinearities, which arise in dc-biased GaAs under spatially varying optical illumination, have been investigated using light diffraction on transient grating technique. Under dc-bias, time resolved four-wave mixing measurements had evidenced an oscillatory behavior and increased efficiency of light diffraction. The effect was found the largest at illumination intensity corresponding to the electron density between 10¹⁵ cm^-3 and 10¹⁶ cm^-3. Numerical modeling of nonlinear transport at various applied dc-voltages and photoexcitation levels revealed conditions for an efficient and fast refractive index modulation by a transient high-field domain grating. Experimental obervations have been explained in terms of nonuniform carrier heating and formation of transient Gunn-domain grating in the region of negative differential resistance. Our results open the possibility of measuring hot-carrier picosecond dynamics and predict a novel way of fast refractive index modulation in dc-biased compound semiconductors.

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Irmantas Kasalynas, Liudvikas Subacius, Ramunas Aleksiejunas, and Kestutis Jarasiunas "Hot-carrier transport governed optical nonlinearities in dc-biased GaAs crystals", Proc. SPIE 5122, Advanced Organic and Inorganic Optical Materials, (8 August 2003); https://doi.org/10.1117/12.515804

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