New aspect of light emission from silicon nanocrystals

Talivaldis Puritis; Jevgenijs Kaupuzs

doi:10.1117/12.515691

8 August 2003 New aspect of light emission from silicon nanocrystals

Talivaldis Puritis, Jevgenijs Kaupuzs

Proceedings Volume 5122, Advanced Organic and Inorganic Optical Materials; (2003) https://doi.org/10.1117/12.515691
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

Intensive light emission (photoluminescence) from silicon nanocrystals has been interpreted in literature as recombinative emission. It has been supposed that the band structure is "pseidodirect." The literature analysis presented in our paper shows that the band structure is indirect and therefore intensive recombinative emission is not possible. According to new aspect, a part of electrons reaches the second conduction subband due to Auger recombination. Then the intensive visible radiation could be caused by transitions of these electrons from the second to the first conduction subband. We have constructed continuity equations for the electron concentration in the first and the second conduction subbands. This system of equations has been solved numerically with two adjustable parameters. At suitable values of these parameters our theoretical curve of the photoluminescence decay well coincides with experimental one.

Citation Download Citation

Talivaldis Puritis and Jevgenijs Kaupuzs "New aspect of light emission from silicon nanocrystals", Proc. SPIE 5122, Advanced Organic and Inorganic Optical Materials, (8 August 2003); https://doi.org/10.1117/12.515691

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