Translator Disclaimer
Paper
8 August 2003 New aspect of light emission from silicon nanocrystals
Author Affiliations +
Proceedings Volume 5122, Advanced Organic and Inorganic Optical Materials; (2003) https://doi.org/10.1117/12.515691
Event: 2003 Chapter books, 2003, Bellingham, WA, United States
Abstract
Intensive light emission (photoluminescence) from silicon nanocrystals has been interpreted in literature as recombinative emission. It has been supposed that the band structure is "pseidodirect." The literature analysis presented in our paper shows that the band structure is indirect and therefore intensive recombinative emission is not possible. According to new aspect, a part of electrons reaches the second conduction subband due to Auger recombination. Then the intensive visible radiation could be caused by transitions of these electrons from the second to the first conduction subband. We have constructed continuity equations for the electron concentration in the first and the second conduction subbands. This system of equations has been solved numerically with two adjustable parameters. At suitable values of these parameters our theoretical curve of the photoluminescence decay well coincides with experimental one.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Talivaldis Puritis and Jevgenijs Kaupuzs "New aspect of light emission from silicon nanocrystals", Proc. SPIE 5122, Advanced Organic and Inorganic Optical Materials, (8 August 2003); https://doi.org/10.1117/12.515691
PROCEEDINGS
6 PAGES


SHARE
Advertisement
Advertisement
Back to Top