Functionalities of Cd<sub>1-x</sub>Zn<sub>x</sub>Se films deposited from a water solution in IR region of a spectrum

A. Sh. Abdinov; M. A. Jafarov; E. F. Nasirov; H. M. Mamedov

doi:10.1117/12.517398

30 September 2003 Functionalities of Cd_1-xZn_xSe films deposited from a water solution in IR region of a spectrum

A. Sh. Abdinov, M. A. Jafarov, E. F. Nasirov, H. M. Mamedov

Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517398
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

In the present work the features of an impurity and induced impurity photoconductivities in IR region, and also anomalous photoconduction and photochemical reaction in Cd_1-xZn_xSe films are considered depending on film deposition and heat treatment (HT) modes. The formation of Cd_i-Cd_i, Zn_i-Zn_i, V_se-Zn_i etc. associations in Cd_1-xZn_xSe films, providing occurrence of optical active electronic states, carried in an interval of energy 0.3÷0.6 eV, allows to use of these films for creation non-cooled photodetectors of IR-range. At illumination of films by λ=0.95 μm light, the anomalous photoconductivity and photomemory phenomenon were observed, connected with defects of metastable states, which concentration can be controlled by film structure, deposition and HT modes, and limits by tunnel transitions of no basic located electrons and holes between r- and s-centres. The photochemical reaction with activation energy of 0.17÷0.21 eV, was observed at illumination (by λ=1.25 μm light) of Cd_0.8Zn_0.2Se films heart treated on air during 10÷15 minutes. It represents a disintegration process of donor-acceptor pairs, consisting r-centres and Cd_i, Zn_i donors, and caused by precipitation conditions and HT.

Citation Download Citation

A. Sh. Abdinov, M. A. Jafarov, E. F. Nasirov, and H. M. Mamedov "Functionalities of Cd_1-xZn_xSe films deposited from a water solution in IR region of a spectrum", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517398

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