Photosensitivity of heterostructure S<sub>1-x</sub>Ge<sub>x</sub>/Si taking into account free-carrier absorption of radiation and length of hot carrier energy path

Pavel S. Serebrennikov

doi:10.1117/12.517360

30 September 2003 Photosensitivity of heterostructure S_1-xGe_x/Si taking into account free-carrier absorption of radiation and length of hot carrier energy path

Pavel S. Serebrennikov

Author Affiliations +

Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517360
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

With allowance for a diffusion motion of hot carriers after absorption IR radiation by the method of Green function a calculation of quantum efficiency and photosensitivity is carried out. The dependence of quantum efficiency and photosensitivity on thickness of the Si_1-xGe_xlayer, free-carrier absorption coefficient of IR radiation and inelastic mean free path of hot carriers is obtained both for forward and backside (through a substrate) illumination.

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Pavel S. Serebrennikov "Photosensitivity of heterostructure S_1-xGe_x/Si taking into account free-carrier absorption of radiation and length of hot carrier energy path", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517360

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