Reverse currents of double-layer heterojunction diodes in conditions of Shockley-Read and Auger carrier generation

Bogdan S. Sokolovsky; V. K. Pysarevsky

doi:10.1117/12.517356

30 September 2003 Reverse currents of double-layer heterojunction diodes in conditions of Shockley-Read and Auger carrier generation

Bogdan S. Sokolovsky, V. K. Pysarevsky

Author Affiliations +

Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517356
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The paper theoretically investigates the possibility of formation of negative differential resistance (NDR) region on the current-voltage characteristic (CVC) reverse branch of a diode with double layer heterojunction (DLHJ) in the diode’s base. The NDR formation is caused by decreasing the carrier thermal generation in the narrow gap part of the base with the thickness of the order of the Debye screening length at increase of the reverse bias. It is shown that the most favourable conditions for manifestation of the NDR are realized in the case when the carrier lifetime in the base region is determined by the Auger processes.

Citation Download Citation

Bogdan S. Sokolovsky and V. K. Pysarevsky "Reverse currents of double-layer heterojunction diodes in conditions of Shockley-Read and Auger carrier generation", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517356

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