Sensitization of IR photosensitivity by electrical field in indium selenide layered crystals

A. Sh. Abdinov; R. F. Babayeva; N. A. Ragimova; R. M. Rzayev; G. H. Eyvazova

doi:10.1117/12.517362

30 September 2003 Sensitization of IR photosensitivity by electrical field in indium selenide layered crystals

A. Sh. Abdinov, R. F. Babayeva, N. A. Ragimova, R. M. Rzayev, G. H. Eyvazova

Proceedings Volume 5126, 17th International Conference on Photoelectronics and Night Vision Devices; (2003) https://doi.org/10.1117/12.517362
Event: 2003 Chapter books, 2003, Bellingham, WA, United States

Abstract

The early studies have demonstrated, that the laminated crystals of the indium selenide (InSe) are highly sensitive photoconductors in a wide range of temperature and light wavelength (formula available in paper). In the present report we have studied opportunities of expansion of a spectral range (sensitization) of the IR-photosensitivity of these crystals to the longer wavelengths. It is established, that in the high-resistance InSe samples with good injecting contacts in superlinear section of the CVC (where the appreciable injection takes place) at rather low temperatures (T less than or equal to 150K) a considerable photosensitivity occurs and in impurity area (up to 3.50 μm with a maximum at λ=2.64 μm a sensitization of the IR-photosensitivity for the investigated InSe single crystals by an electric field takes place. The dependence of this phenomenon on magnitude of the external electric field voltage, applied to the sample, as well as on the used contact materials, temperature, wavelength and intensity of an impurity light have been studied. Is has shown, that a sensitization of the IR-photosensitivity of the InSe single crystals by an electric field and the particular features of this phenomenon are conditioned with the presence of trapping levels of a various type and large-scale dimensional discontinuities. The values of fundamental parameters of trapping levels, as well as discontinuities have been estimated.

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A. Sh. Abdinov, R. F. Babayeva, N. A. Ragimova, R. M. Rzayev, and G. H. Eyvazova "Sensitization of IR photosensitivity by electrical field in indium selenide layered crystals", Proc. SPIE 5126, 17th International Conference on Photoelectronics and Night Vision Devices, (30 September 2003); https://doi.org/10.1117/12.517362

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KEYWORDS

Crystals

Indium

Temperature metrology

Semiconductors

Dysprosium

Liquids

Nitrogen

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