Comparative evaluation of positive and negative chemically amplified resist characteristics for 90-nm-node photomask production

Woo-Gun Jeong; Dong-Il Park; Eui-Sang Park; Sun-Kyu Seo; Hyuk-Joo Kwon; Jin-Min Kim; Sung-Mo Jung; Sang-Soo Choi

doi:10.1117/12.504184

28 August 2003 Comparative evaluation of positive and negative chemically amplified resist characteristics for 90-nm-node photomask production

Woo-Gun Jeong, Dong-Il Park, Eui-Sang Park, Sun-Kyu Seo, Hyuk-Joo Kwon, Jin-Min Kim, Sung-Mo Jung, Sang-Soo Choi

Author Affiliations +

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504184
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

For the latest photomask fabrication, better critical dimension (CD) control and pattern fidelity to design size are required. According to the latest ITRS roadmap, masks for the 90 nm technology node should have CD uniformity of 6~8nm (3σ). Moreover, CD control is particularly critical for isolated opaque lines, such as those found in gate layers, whose loading is primarily clear field. The high acceleration voltage electron beam (EB) systems that employ variable shaped beams (VSBs) are used for mask writing due to their high throughput. To minimize write time and fogging effects, and to control mean CD and improve CD uniformity for mask production, it is well known that negative tone resists enable better VSB mask writing system performance. In these circumstances, positive and negative tone chemically amplified resists (CARs), FEP171 (Fuji Films) and FEN270 (Fuji-Films), were evaluated empirically for mask making. We investigated and compared resolution, sensitivity, resist profiles, CD variation vs. exposure dose, proximity effect correction (PEC), fogging effect, pattern fidelity, and so on. Furthermore, write tool data volume and throughput, defect trends, and other process parameters on the positive and negative tone resists were evaluated and compared by applying test patterns.

Citation Download Citation

Woo-Gun Jeong, Dong-Il Park, Eui-Sang Park, Sun-Kyu Seo, Hyuk-Joo Kwon, Jin-Min Kim, Sung-Mo Jung, and Sang-Soo Choi "Comparative evaluation of positive and negative chemically amplified resist characteristics for 90-nm-node photomask production", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504184

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
11 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Critical dimension metrology

Photomasks

Chromium

Platinum

Opacity

Vestigial sideband modulation

Chemically amplified resists

Show All Keywords

Keywords/Phrases

Search In:

Publication Years