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28 August 2003 Dry etch proximity modeling in mask fabrication
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Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504052
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan
Abstract
Microloading in photomask fabrication is a key parameter in process optimization. A Variable Bias Model has been successfully used in explaining etch proximity behavior during wafer etching. This model recently became part of the VT5 model suit. In this study, we apply variable bias modeling to the dry etching in mask fabrication. A special etch test pattern is used to characterize etch bias under various process conditions. We show that etch proximity is adequately described by two proximity parameters: density and separation. The model coefficients depend on the process parameters and can be used to characterize and explain etch behavior in terms of microloading and etch aperture effects. Ability to explain mask etching is important for accurate OPC modeling. While some modeling methodologies consider mask and wafer processes as a single "black box," we found that more accurate OPC models are generated by building separate models for mask-making, optical, and wafer processing steps. We show how variable etch model can be used to compensate for iso-dense mask bias and how this step fits into OPC flow.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yuri Granik "Dry etch proximity modeling in mask fabrication", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504052
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